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STUD609S Arkusz danych(PDF) 2 Page - SamHop Microelectronics Corp.

Numer części STUD609S
Szczegółowy opis  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Producent  SAMHOP [SamHop Microelectronics Corp.]
Strona internetowa  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD609S Arkusz danych(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
-60
V
1
IGSS
±100
nA
VGS(th)
-2
V
42
gFS
32
S
VSD
CISS
2420
pF
COSS
144
pF
CRSS
107
pF
Qg
54
nC
33
nC
Qgs
120
nC
Qgd
18
tD(ON)
43
ns
tr
7
ns
tD(OFF)
11.2
ns
tf
ns
Gate-Drain Charge
VDS=-25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-30V
ID=-1.0A
VGS=-10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=-30V,ID=-10A,VGS=-10V
Fall Time
Turn-On Delay Time
m ohm
VGS=-10V , ID=-10A
VDS=-10V , ID=-10A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=-250uA
VDS=-48V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=-250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=-4.5V , ID=-8.5A
53
59
80
m ohm
f=1.0MHz
VDS=-30V,ID=-10A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS=0V,IS= -2A
-0.78
-1.3
V
Notes
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 30V .(See Figure13)
www.samhop.com.tw
Jun,22,2012
2
nC
VDS=-30V,ID=-10A,VGS=-4.5V
20
_
_
b
-2.7
-4
b
Ver 1.1
STU/D609S



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