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HFS2N90 Arkusz danych(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS2N90 Arkusz danych(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() 10 -1 10 0 10 1 0 300 600 900 1200 1500 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] Typical Characteristics 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 1. V GS = 0V 25 V SD, Source-Drain voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics V GS, Gate-Source Voltage [V] 04 8 12 16 20 0 2 4 6 8 10 12 V DS = 450V V DS = 180V V DS = 720V * Note : I D = 2.2A Q G, Total Gate Charge [nC] 012 3456 0 2 4 6 8 10 V GS = 20V V GS = 10V Note : T J = 25 oC I D, Drain Current [A] 10 -1 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V * Notes : 1. 300us Pulse Test 2. T C = 25 oC V DS, Drain-Source Voltage [V] |
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