HFS9N50 datasheet(3/7 Pages) SEMIHOW

3 / 7 page

-1

2. T

C = 25

Top :

15 V

10 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom :

5.5 V

DS , Drain-Source Voltage [V]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Typical Characteristics

-1

600

1200

1800

2400

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

DS = 250V

DS = 100V

DS = 400V

D = 9.0 A

G, Total Gate Charge [nC]

246

-1

1. V

DS = 40V

-55

150

GS , Gate-Source Voltage [V]

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

J = 25

GS = 20V

GS = 10V

D , Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-1

150

1. V

GS = 0V

SD , Source-Drain Voltage [V]

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