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WFU2N60 Arkusz danych(PDF) 1 Page - Wisdom technologies Int`l

Numer części WFU2N60
Szczegółowy opis  600V N-Channel MOSFET
PDF  6 Pages
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Producent  WISDOM [Wisdom technologies Int`l]
Strona internetowa  http://www.wisdom-technologies.com/index.aspx
Logo WISDOM - Wisdom technologies Int`l

WFU2N60 Arkusz danych(HTML) 1 Page - Wisdom technologies Int`l

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HIGH VOLTAGE
N-Channel MOSFET 
 
 
   Rev.A0,August , 2010 | 
1 
 
 
 
WFU2N60/WFD2N60
   TO‐252 
     TO‐251 
600V N-Channel MOSFET
 
G‐Gate,D‐Drain,S‐Sourse
 
Features
□
Low Intrinsic Capacitances 
□
Excellent Switching Characteristics 
□
Extended Safe Operating Area 
□
Unrivalled Gate Charge : 8.5 nC (Typ.)
□
BVDSS=600V,ID=2A
□
Lower RDS(on) : 5Ω (Max) @VG=10V
 
□
100% Avalanche Tested
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
Parameter
WFU/D2N60
Units
VDSS
Drain-Sourse Voltage
600
V
ID
Drain Current
-continuous (Tc=25℃)
2
A
-continuous (Tc=100℃)
1.5
A
VGS
Gate-Sourse Voltage
±
30
V
EAS
Single Plused Avanche Energy
(Note1)
120
mJ
IAR
Avalanche Current
(Note2)
2
A
PD
Power Dissipation (Tc=25℃)
44
W
TJ,TSTG
Operating and Storage Temperature Range
-55 ~ +150
℃
TL
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
300
℃
Thermal Characteristics 
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance,Junction to Case
--
2.87
℃
/W
RθCA
Thermal Resistance,Junction to Ambient*
--
50
℃
/W
RθJA
Thermal Resistance,Junction to Ambient
--
110
℃
/W
*When mounted on the minimum pad size recommended (PCB mounted)
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