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RF5601 Arkusz danych(PDF) 2 Page - RF Micro Devices

Numer części RF5601
Szczegółowy opis  4.9GHz to 5.85GHz Low Noise Amplifier with Bypass
PDF  9 Pages
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Producent  RFMD [RF Micro Devices]
Strona internetowa  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF5601 Arkusz danych(HTML) 2 Page - RF Micro Devices

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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS131029
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
2 of 9
RF5601
Absolute Maximum Ratings
Parameter
Rating
Unit
DC Supply Voltage
5.5
V
RF Input Power
+5*
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Moisture Sensitivity
MSL2
*Note: Maximum input power with a 50
Ω load in High Gain mode.
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of antimony
trioxide in polymeric materials and red
phosphorus as a flame retardant, and
<2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Parameter
Specification
Unit
Condition
Min
Typ
Max
Typical Conditions
Temp = 25°C, VDD = 3.3V, LNA_EN = 3.3V, BYP_EN = 3.3V in high
gain mode, BYP_EN = 0V in Bypass mode,
Frequency = 4.9 GHz to 5.85 GHz unless otherwise noted
Frequency
4.9
5.85
GHz
DC Voltage Supply (VDD)
2.3
3.3
4.8
V
LNA_EN Low
0.2
V
LNA OFF. See logic table for additional control settings.
LNA_EN High
2.3
3.3
VDD
V
LNA ON. BYP_EN control must be high simultaneously for High Gain Mode.
See control table.
BYP_EN Low
0.2
V
Bypass mode ON. See logic table for more details.
BYP_EN High
1.8
3.3
VDD
V
Bypass mode OFF. See logic table for more details.
LNA Current
LNA IDD
12
17
µA
LNA in “On” state, over full DC supply range, LNA_EN supply range and over
normal operating temperature range (-20°C to 75°C)
3
5
µA
LNA in “Off” state, VDD = 0V; LNA_EN = 0V, BYP_EN = 0V
LNA Enable
2
10
µA
VDD = 2.3V to 4.8V, LNA_EN = 2.3V to 4.8V, over full frequency range, and over
normal operating temperatures - 20°C to +75°C
High Gain Mode
Gain
9
12
15
dB
Over full VDD and LNA_EN ranges, over frequency and over full temperature
range from -40°C to +85°C
Noise Figure
Hi Gain Mode
1.8
2.6
dB
Over full VDD, LNA_EN, and BYP_EN voltages, over frequency and normal
operating temperatures (-20°C to +75°C)
Bypass Mode
Insertion Loss
5.0
7.0
dB
Passband Ripple
-1.0
+1.0
dB
LNA is in High Gain mode, over full frequency range, over full VDD and LNA_EN
voltage range
Input IP3
+9
dBm
High Gain mode
RF Port Return Loss
9.6
15.0
dB
Input and output. No external matching.



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