ZXTC4591AMC_15 datasheet(6/9 Pages) DIODES

6 / 9 page

ZXTC4591AMC

Document number: DS31925 Rev. 4 - 2

6 of 9

www.diodes.com

October 2012

A Product Line of

Diodes Incorporated

ZXTC4591AMC

PNP - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-40

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 12)

BVCEO

-40

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

IE = -100µA

Collector Cutoff Current

ICBO

-100

VCB = -30V

Emitter Cutoff Current

IEBO

-100

nA

VEB = -4V

Collector Emitter Cutoff Current

ICES

-100

VCE = -30V

Static Forward Current Transfer Ratio (Note 12)

hFE

300

250

160

800

IC = -1mA, VCE = -5V

IC = -100mA, VCE = -5V

IC = -500mA, VCE = -5V

IC = -1A, VCE = -5V

IC = -2A, VCE = -5V

Collector-Emitter Saturation Voltage (Note 12)

VCE(sat)

-200

-350

-500

IC = -0.1A, IB = -1mA

IC = -0.5A, IB = -20mA

IC = -1.0A, IB = -100mA

Base-Emitter Turn-On Voltage (Note 12)

VBE(on)

-1.0

IC = -1A, VCE = -5V

Base-Emitter Saturation Voltage (Note 12)

VBE(sat)

-1.1

IC = -1A, IB = -50mA

Output Capacitance

Cobo

VCB = -10V, f = 1MHz

Transition Frequency

150

MHz

VCE = -10V, IC = -50mA,

f = 100MHz

Notes:

12. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

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