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MMBTA13 Arkusz danych(PDF) 1 Page - Micro Commercial Components |
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MMBTA13 Arkusz danych(HTML) 1 Page - Micro Commercial Components |
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1 / 4 page ![]() MMBTA13 MMBTA14 NPN Darlington Amplifier Transistor SOT-23 Suggested Solder Pad Layout Features • Operating And Storage Temperatures –55 OC to 150OC • RθJA is 556 OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”) • Capable of 225mWatts of Power Dissipation • Marking Code: MMBTA13 ----K2D; MMBTA14 ---- 1N DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .110 .120 2.80 3.04 B .083 .098 2.10 2.64 C .047 .055 1.20 1.40 D .035 .041 .89 1.03 E .070 .081 1.78 2.05 F .018 .024 .45 .60 G .0005 .0039 .013 .100 H .035 .044 .89 1.12 J .003 .007 .085 .180 K .015 .020 .37 .51 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* (IC=100uAdc, IB=0) 30 Vdc V(BR)CBO Collector-Base Breakdown Voltage 30 Vdc V(BR)EBO Emitter-Base Breakdown Voltage 10 Vdc IC Collector Current-Continuous 300 mAdc ICBO Collector Cutoff Current (VCB=30Vdc, IE=0) 100 nAdc IEBO Emitter Cutoff Current (VEB=10Vdc, IC=0) 100 nAdc ON CHARACTERISTICS hFE MMBTA13 MMBTA14 MMBTA13 MMBTA14 DC Current Gain* (IC=10mAdc, VCE=5.0Vdc) (IC=150mAdc, VCE=1.0Vdc) 5000 10000 10000 20000 VCE(sat) Collector-Emitter Saturation Voltage (IC=100mAdc, IB=0.1mAdc) 1.5 Vdc VBE(sat) Base-Emitter Saturation Voltage (IC=100mAdc,VCE=5.0Vdc) 2.0 Vdc SMALL-SIGNAL CHARACTERISTICS fT Current Gain-Bandwidth Product (IC=10mAdc, VCE=5.0Vdc, f=100MHz) 125 MHz Cobo Output Capacitance (VCB=10Vdc, IE=0, f=1.0MHz) 8.0 pF Cibo Input Capacitance (VBE=0.5Vdc, IC=0, f=1.0MHz) 15 pF SWITCHING CHARACTERISTICS td Delay Time (VCC=30Vdc, VBE=0.5Vdc 10 ns tr Rise Time IC=150mAdc, IB1=15mAdc) 25 ns ts Storage Time (VCC=30Vdc, IC=150mAdc 225 ns tf Fall Time IB1=IB2=15mAdc) 60 ns .079 2.000 inches mm .031 .800 .035 .900 .037 .950 .037 .950 K A B C D E F G H J Base Collector Emitter omponents 21201 Itasca Street Chatsworth !"# $% !"# MCC www.mccsemi.com |
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