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2SB798G-X-AB3-R Arkusz danych(PDF) 1 Page - Unisonic Technologies |
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2SB798G-X-AB3-R Arkusz danych(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page ![]() UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 4 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R208-020.C POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA ) * Excellent DC Current Gain Linearity : hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A) ORDERING INFORMATION Order Number Package Pin Assignment Packing 1 2 3 2SB798G-x-AB3-R SOT-89 B C E Tape Reel Note: Pin Assignment: B: Base C: Collector E: Emitter MARKING |
Podobny numer części - 2SB798G-X-AB3-R |
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Podobny opis - 2SB798G-X-AB3-R |
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