MMBTA13G-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

MMBTA13

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-006.d



ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCES

Emitter-Base Voltage

VEBO

Collector Dissipation

VEBO

350

Collector Current

500

Junction Temperature

150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Emitter Breakdown Voltage

BVCES

IC=100A, IB=0

Collector Cut-Off Current

ICBO

VCB=30V, IE=0

100

Emitter Cut-Off Current

IEBO

VEB=10V, IC=0

100

DC Current Gain

hFE

VCE=5V, IC=100mA

10000

Collector-Emitter Saturation Voltage

VCE(SAT) IC=100mA, IB=0.1mA

1.5

Base-Emitter on Voltage

VBE(ON)

VCE=5V, IC=100mA

2.0

Current Gain Bandwidth Product

VCE=5V, IC=10mA, f=100MHz

125

MHz

Note: Pulse test: Pulse Width<300

s, Duty Cycle=2%

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