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MMDT3906G-AL6-R Arkusz danych(PDF) 2 Page - Unisonic Technologies

Numer części MMDT3906G-AL6-R
Szczegółowy opis  DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  3 Pages
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Producent  UTC [Unisonic Technologies]
Strona internetowa  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMDT3906G-AL6-R Arkusz danych(HTML) 2 Page - Unisonic Technologies

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MMDT3906
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R218-014.d
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current-Continuous
IC
-200
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
625
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF Characteristics
(Note)
Collector-Base Breakdown Voltage
VCBO
IC=-10A,IE=0
-40
V
Collector-Emitter Breakdown Voltage
VCEO
IC=-1mA, IB=0
-40
V
Emitter-Base Breakdown Voltage
VEBO
IE=-10A, IC=0
-5
V
Collector Cutoff Current
ICEX
VCE=-30V, VEB=-3V
-50
nA
Base Cutoff Current
IBL
VCE=-30V, VEB=-3V
-50
nA
ON Characteristics
(Note)
DC Current Gain
hFE1
VCE=-1V, IC=-0.1mA
60
hFE2
VCE=-1V, IC=-1mA
80
hFE3
VCE=-1V, IC=-10mA
100
300
hFE4
VCE=-1V, IC=-50mA
60
hFE5
VCE=-1V, IC=-100mA
30
Collector-Emitter Saturation Voltage
VCE(SAT)1IC=-10mA, IB=-1mA
-0.25
V
VCE(SAT)2IC=-50mA, IB=-5mA
-0.4
V
Base-Emitter Saturation Voltage
VBE(SAT)1IC=-10mA, IB=-1mA
-0.65
-0.85
V
VBE(SAT)2IC=-50mA, IB=-5mA
-0.95
V
Small Signal Characteristics
Output Capacitance
COB
VCB=-5V,IE=0, f=1MHz
4.5
pF
Current Gain-Bandwidth Product
fT
VCE=-20V, IC=-10mA, f=100MHz
250
MHz
Switching Characteristics
Turn on Time
tON
VCC=-3V, VBE=-0.5V, IC=-10mA,
IB1=-1mA
70
ns
Turn off Time
tOFF
IB1=1B2=-1mA
300
ns
Note: Pulse test: PW ≤ 300μs, Duty Cycle ≤ 2.0%



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