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UD12KG-AL6-R Arkusz danych(PDF) 2 Page - Unisonic Technologies |
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UD12KG-AL6-R Arkusz danych(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() UD12K DUAL TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R218-005.C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) TR1 (PNP) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC -50 V Input Voltage VIN -40~10 V Output Current IC -100 mA Total Power Dissipation (120mW per element must not be exceeded) PD 150 mW Junction Temperature TJ +150 ° C Storage Temperature TSTG -55 ~ +150 ° C TR2 (NPN) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC 50 V Input Voltage VIN -10~40 V Output Current IC 100 mA Total Power Dissipation (120mW per element must not be exceeded) PD 150 mW Junction Temperature TJ +150 ° C Storage Temperature TSTG -55 ~ +150 ° C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) TR1 (PNP) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT VI(OFF) VCC=-5V, IOUT=-100μA -0.5 V Input Voltage VI(ON) VOUT=-0.3V, IOUT=-2mA -3 V Output Voltage VO(ON) IOUT=-10mA, IIN=-0.5mA -0.1 -0.3 V Input Current IIN VIN=-5V -0.18 mA Output Current IO(OFF) VCC=-50V, VIN=0V -0.5 µA DC Current Gain hFE VOUT=-5V, IOUT=-5mA 68 Collector-Emitter Saturation Voltage VCE(SAT) IC=5mA, IB=0.25mA 0.1 0.3 V Transition Frequency fT VCE=-10V, IE=-5mA, f=100MHz (Note) 250 MHz Input Resistance R1 32.9 47 61.1 KΩ Resistance Ratio R2/R1 0.8 1 1.2 TR2 (NPN) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT VI(OFF) VCC=5V, IOUT=100μA 0.5 V Input Voltage VI(ON) VOUT=0.3V, IOUT=2mA 3 V Output Voltage VO(ON) IOUT=10mA, IIN=0.5mA 0.1 0.3 V Input Current IIN VIN=5V 0.18 mA Output Current IO(OFF) VCC=50V, VIN=0V 0.5 µA DC Current Gain hFE VOUT=5V, IOUT=5mA 68 Collector-Emitter Saturation Voltage VCE(SAT) IC=-5mA, IB=-0.25mA -0.1 -0.3 V Transition Frequency fT VCE=10V, IE=-5mA, f=100MHz (Note) 250 MHz Input Resistance R1 32.9 47 61.1 KΩ Resistance Ratio R2/R1 0.8 1 1.2 Note: Transition frequency of the device |
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