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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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UP9T15GL-TN3-R Arkusz danych(PDF) 1 Page - Unisonic Technologies |
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UP9T15GL-TN3-R Arkusz danych(HTML) 1 Page - Unisonic Technologies |
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1 / 5 page  UNISONIC TECHNOLOGIES CO., LTD UP9T15G Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-208.B N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UP9T15G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)=20V * ID=12 .5A (VGS=4.5V) * RDS(ON) < 50mΩ @ VGS =4.5 V, ID =6 A * RDS(ON) < 80mΩ @ VGS =2.5 V, ID =5.2 A SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UP9T15GL-TN3-R UP9T15GP-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
Podobny numer części - UP9T15GL-TN3-R |
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Podobny opis - UP9T15GL-TN3-R |
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