UT06P03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-156.D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

-4

A

Pulsed Drain Current (Note 1, 2)

-20

A

SOT-89

0.78

W

SOT-26

0.41

W

TO-252

1

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MAX

UNIT

Junction to Ambient

SOT-89

160

°C/W

SOT-26

300

°C/W

TO-252

110

°C/W

Junction to Case

SOT-89

18

°C/W

SOT-26

110

°C/W

TO-252

7.93

°C/W