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UT4406G-S08-R Arkusz danych(PDF) 1 Page - Unisonic Technologies |
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UT4406G-S08-R Arkusz danych(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT4406 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-233.C N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4406 can provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V by using UTC’s advanced trench technology which makes an excellent high side switch for notebook CPU core DC-DC conversion. FEATURES * RDS(ON) < 14.8mΩ @ VGS=10V, ID=12A * RDS(ON) < 17.5mΩ @ VGS=4.5V, ID=10A * RDS(ON) < 26.8mΩ @ VGS=2.5V, ID=8A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 1.Gate 3.Source 2.Drain SOP-8 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 12 3 4 56 7 8 UT4406G-S08-R SOP-8 S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
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Podobny opis - UT4406G-S08-R |
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