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UT3P06G-AG6-R Arkusz danych(PDF) 2 Page - Unisonic Technologies

Numer części UT3P06G-AG6-R
Szczegółowy opis  P-CHANNEL POWER MOSFET
PDF  3 Pages
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Producent  UTC [Unisonic Technologies]
Strona internetowa  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3P06G-AG6-R Arkusz danych(HTML) 2 Page - Unisonic Technologies

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UT3P06
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-673.E
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
-3
A
Pulsed
IDM
-10
A
Avalanche Current (L=0.1mH)
IAR
-7
A
Power Dissipation (Note 1, 2)
SOT-23
PD
0.35
W
SOT-26
1.1
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 1,2)
SOT-23
θJA
350
°C/W
SOT-26
110
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on FR4 Board.
3. t ≤ 5 sec
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VDS=0V
-60
V
Drain-Source Leakage Current
IDSS
VDS=-48V, VGS=0V
-1
µA
VDS=-48V, VGS=0V , TJ=150°C
-50
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1
V
Static Drain-Source On-State Resistance
(Note 1)
RDS(ON)
VGS=-10V, ID=-3A
190
220
mΩ
VGS=-4.5V, ID=-1.9A
265
310
On State Drain Current (Note 1)
ID(ON)
VGS=-10V, VDS=-5V
-10
A
SWITCHING PARAMETERS
(Note 2)
Total Gate Charge
QG
VGS=-10V, VDS=-30V, ID=-3A
7
14
nC
Gate to Source Charge
QGS
1.6
nC
Gate to Drain Charge
QGD
1.2
nC
Turn-ON Delay Time
tD(ON)
VDD=-30V, VGEN=-10V, ID=-1A,
RL=30 Ω , RG=6Ω
8
16
ns
Rise Time
tR
12
24
ns
Turn-OFF Delay Time
tD(OFF)
23
45
ns
Fall-Time
tF
12
25
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
(Note 2)
Maximum Body-Diode Continuous Current
IS
-1.7
A
Maximum Body-Diode Pulsed Current
ISM
-10
A
Drain-Source Diode Forward Voltage
VSD
IS=-3A, VGS=0V (Note 1)
-0.8
-1.2
V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Guaranteed by design, not subject to production testing.



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