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UT3N06L-TN3-R Arkusz danych(PDF) 2 Page - Unisonic Technologies

Numer części UT3N06L-TN3-R
Szczegółowy opis  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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Producent  UTC [Unisonic Technologies]
Strona internetowa  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3N06L-TN3-R Arkusz danych(HTML) 2 Page - Unisonic Technologies

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UT3N06
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-366.G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
(VGS=4.5V, TA= 25°C) (Note 2)
ID
3.0
A
Pulsed Drain Current (Note 3, 4)
IDM
10
A
Power Dissipation (TA= 25°C)
SOT-23
PD
0.35
W
SOT-89
0.69
W
TO-251/TO-252
1.13
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in
2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad
3. Pulse width limited by TJ(MAX)
4. Pulse width ≤300μs, duty cycle≤2%
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient
SOT-23
θJA
350
°C/W
SOT-89
180
°C/W
TO-251/TO-252
110
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID =250µA
60
V
Breakdown Voltage Temperature Coefficient
J
DSS
T
∆
BV
∆
Reference to 25°C, ID=1mA
0.05
V/°C
Drain-Source Leakage Current
IDSS
VDS =60V,VGS =0V
10
µA
Gate-Source Leakage Current
IGSS
VGS =±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250µA
1.0
3.0
V
Drain to Source On-state Resistance
RDS(ON)
VGS =10V, ID =3A
90
mΩ
VGS =4.5V, ID =2A
120
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V,VGS=0V,f =1.0MHz
490
780
pF
Output Capacitance
COSS
55
pF
Reverse Transfer Capacitance
CRSS
40
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note)
tD(ON)
VGS=10V, VDS=30V, ID=1A,
RD =30Ω, RG =3.3Ω
6
ns
Turn-ON Rise Time
tR
5
42
ns
Turn-OFF Delay Time
tD(OFF)
16
ns
Turn-OFF Fall-Time
tF
3
58
ns
Total Gate Charge (Note)
QG
VGS =4.5V, VDS =48V, ID =3A
6
10
nC
Gate Source Charge
QGS
1.6
nC
Gate Drain Charge
QGD
3
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
VSD
IS =1.2A, VGS =0V
1.2
V
Reverse Recovery Time
trr
IS=3A,VGS=0V, dI/dt=100A/µs
25
ns
Reverse Recovery Charge
QRR
26
nC
Note: Pulse width ≤300μs, duty cycle≤2%.



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