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UT6898G-S08-R Arkusz danych(PDF) 1 Page - Unisonic Technologies |
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UT6898G-S08-R Arkusz danych(HTML) 1 Page - Unisonic Technologies |
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1 / 5 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT6898 Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-239.B N-CHANNEL ENHANCEMENT DESCRIPTION The UT6898 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)<18 mΩ @ VGS=4.5V, ID=9.4A * RDS(ON)<14 mΩ @ VGS=2.5V, ID=8.3A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL (7) (8) D1 (4) G2 (2) G1 S1 (1) S2 (3) (5) (6) D2 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 12 3 4 56 7 8 UT6898G-S08-R SOP-8 S G S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
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