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UTT10N10L-TN3-R Arkusz danych(PDF) 1 Page - Unisonic Technologies |
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UTT10N10L-TN3-R Arkusz danych(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page ![]() UNISONIC TECHNOLOGIES CO., LTD UTT10N10 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-714.d 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(on) <180mΩ @VGS = 10 V * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UTT10N10L-TM3-T UTT10N10G-TM3-T TO-251 G D S Tube UTT10N10L-TN3-R UTT10N10G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
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