UTT25P06G-TN3-R datasheet(3/5 Pages) UTC

3 / 5 page

UTT25P06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-595.E



ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-60

Gate-Source Voltage

Continuous

VGSS

±15

Non−Repetitive (tP≤10ms)

VGSM

±20

Drain Current

Continuous @ TA=25°C

-27.5

Pulsed (tP≤10µs)

IDM

-80

Power Dissipation

@TA=25°C

TO-220/TO-220F

TO-251/TO-252

1.25

Junction Temperature

+175

°C

Storage Temperature

TSTG

-55~+175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. When surface mounted to an FR4 board using 1" pad size (Cu Area 1.127 in

2).

3. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.412 in

2).



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

θJA

62.5

°C/W

TO-251/TO-252

100

°C/W

Junction to Case

TO-220

θJC

1.2

°C/W

TO-220F

4.5

°C/W

TO-251/TO-252

2.5

°C/W

UTT25P06G-TN3-R Arkusz danych(PDF) 3 Page - Unisonic Technologies

UTT25P06G-TN3-R Arkusz danych(HTML) 3 Page - Unisonic Technologies

Html Pages

1 2 3 4 5

Arkusz danych Pobierz

Link URL