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UT4114G-S08-R Arkusz danych(PDF) 2 Page - Unisonic Technologies

Numer części UT4114G-S08-R
Szczegółowy opis  N-CHANNEL JUNCTIN SILICON FET
PDF  4 Pages
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Producent  UTC [Unisonic Technologies]
Strona internetowa  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT4114G-S08-R Arkusz danych(HTML) 2 Page - Unisonic Technologies

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UT4114
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-A78.b
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±16
V
Drain Current t
Continuous
(TJ=150°C)
TC= 25°C
ID
20
A
TC= 70°C
18.2
Pulsed
IDM
50
A
Continuous Source - Drain Diode
Current
TC= 25°C
IS
5.1
A
Single Pulsed Avalanche Current
L = 0.1mH
IAS
30
A
Single Pulsed Avalanche Energy
EAS
45
mJ
Power Dissipation
TC= 25°C
PD
5.7
W
Junction Temperature
TJ
-55 ~ 150
°C
Storage Temperature
TSTG
-55 ~ 150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Based on TC = 25 °C
3. Maximum under steadg state conditions is 85 °C/W.
4. Package limited.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note)
t ≤10 s
θJA
50
°C/W
Note: Surface Mounted on 1×1 FR4 board.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
20
V
VDS Temperature Coefficient
△
VDS/TJ ID=250µA
19
mV/°C
Drain-Source Leakage Current
IDSS
VDS=20V, VGS=0V
1
µA
VDS=20V, VGS=0V, TJ=55°C
10
Gate- Source Leakage Current
Forward
IGSS
VGS=+16V, VDS=0V
+100
nA
Reverse
VGS=-16V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.0
2.1
V
VGS(TH) Temperature Coefficient
△
VGS/TJ ID=250µA
-5.3
mV/°C
Static Drain-Source On-State Resistance
(Note 1)
RDS(ON)
VGS=10V, ID=10A
4.9
6
mΩ
VGS=4.5V, ID=7A
5.6
7
mΩ
Forward Transconductance (Note 1)
gFS
VDS=10V, ID=10A
55
S
On State Drain Current (Note 1)
ID(ON)
VGS=10V, VDS≥5V
30
A
DYNAMIC PARAMETERS
(Note 2)
Input Capacitance
CISS
VGS=0V, VDS=10V,
f=1.0MHz
3700
pF
Output Capacitance
COSS
745
pF
Reverse Transfer Capacitance
CRSS
315
pF



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