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UF830KL-TND-R Arkusz danych(PDF) 4 Page - Unisonic Technologies

Numer części UF830KL-TND-R
Szczegółowy opis  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  7 Pages
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Producent  UTC [Unisonic Technologies]
Strona internetowa  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UF830KL-TND-R Arkusz danych(HTML) 4 Page - Unisonic Technologies

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UF830K-MT
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R209-030.D
ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250μA, VGS=0V
500
V
On-State Drain Current (Note 1)
ID(ON)
VDS>ID(ON)×RDS(ON)MAX, VGS=10V
4.5
A
Drain-Source Leakage Current
IDSS
VDS= Rated BVDSS, VGS=0V
25
μA
VDS=0.8×Rated BVDSS
VGS=0V, TJ= 125°C
250
μA
Gate-Source Leakage Current
IGSS
VGS=±30V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
ID=2.5A, VGS=10V (Note 2)
1.50
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
420
pF
Output Capacitance
COSS
66
pF
Reverse Transfer Capacitance
CRSS
6.5
pF
SWITCHING PARAMETERS
Turn-On Delay Time
tD(ON)
VDD=30V, ID≈0.5A RGS=25Ω
(Note 2)
48
ns
Turn-On Rise Time
tR
48
ns
Turn-Off Delay Time
tD(OFF)
42
ns
Turn-Off Fall Time
tF
44
ns
Total Gate Charge
QG
VGS=10V, ID=1.3A, VDD=50V
IG=100mA (Note 3)
13.8
nC
Gate-Source Charge
QGS
5.4
nC
Gate-Drain Charge
QGD
6.0
nC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Source to Drain Diode Voltage
VSD
TJ=25°C,ISD=4.5A, VGS=0V(Note 1)
1.6
V
Continuous Source to Drain Current
ISD
(Note 2)
5.5
A
Pulse Source to Drain Current
ISDM
18
A
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.



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