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MM018-06L Arkusz danych(PDF) 2 Page - Microsemi Corporation

Numer części MM018-06L
Szczegółowy opis  3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
PDF  3 Pages
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Producent  MICROSEMI [Microsemi Corporation]
Strona internetowa  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MM018-06L Arkusz danych(HTML) 2 Page - Microsemi Corporation

  MM018-06L Datasheet HTML 1Page - Microsemi Corporation MM018-06L Datasheet HTML 2Page - Microsemi Corporation MM018-06L Datasheet HTML 3Page - Microsemi Corporation  
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DESCRIPTION
SYMBOL
CONDITIONS
PART
MIN
TYP.
MAX
UNIT
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
BVCES
VGS = 0 V, IC = 250
µA
MM118-06
MM118-12
600
1200
V
Gate Threshold Voltage
VGE(th)
VCE = VGE, IC = 250
µA
VCE = VGE, IC = 2.5 mA
VCE = VGE, IC = 350
µA
MM118-06F
MM118-06L
MM118-12
2.5
4
4.5
4
5.5
5.0
7
6.5
V
Gate-to-Emitter Leakage Current
IGES
VGE =
±20V
DC, VCE = 0
TJ = 25
°C
TJ = 125
°C
(ALL)
±100
±200
nA
Collector-to-Emitter Leakage Current
(Zero Gate Voltage Collector Current)
ICES
VCE =0.8
•BV
CES
TJ = 25
°C
VGE = 0 V
TJ = 125
°C
(ALL)
200
1000
µA
Collector-to-Emitter Saturation Voltage
(1)
VCE(sat)
VGE= 15V, IC= 30A
TJ = 25
°C
IC= 60A
TJ = 25
°C
IC= 30A
TJ = 125
°C
IC= 30A
TJ = 25
°C
VGE= 15V, IC= 25A
TJ = 25
°C
IC= 50A
TJ = 25
°C
IC= 25A
TJ = 125
°C
MM118-06F
MM118-06F
MM118-06F
MM018-06L
MM118-12
MM118-12
MM118-12
2.2
3.5
2.2
2.2
2.7
3.4
3.3
2.9
tbd
tbd
2.5
3.2
tbd
3.9
V
Forward Transconductance (1)
gfs
VCE
≥ 10 V; I
C = 30 A
VCE
≥ 10 V; I
C = 30 A
MM118-06F
MM118-06L
MM118-12
15
7
8.5
20
13
20
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
VGE = 0 V, VCE = 25 V, f = 1 MHz
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
2500
2760
1650
230
240
250
70
51
110
tbd
tbd
2200
tbd
tbd
380
tbd
tbd
160
pF
INDUCTIVE LOAD, Tj= 25
°C (2,3)
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
td(on)
tri
Eon
td(off)
tfi
Eoff
VGE = 15 V, L= 100
µH note 2, 3
for MM118-06: VCE = 480 V,
IC = 30 A, RG = 4.7
Ω
for MM118-12: VCE= 600 V,
IC= 25 A, RG = 47
Ω
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
25
60
75
30
130
65
3.6
175
400
420
125
400
45
1.3
5
2.4
tbd
tbd
110
tbd
tbd
100
-
tbd
tbd
560
175
tbd
60
-
-
-
ns
ns
ns
ns
ns
ns
mJ
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
Electrical Parameters, per switch @ 25
°C (unless otherwise specified)
MM-XX SERIES
DESCRIPTION
SYMBOL
MM118-06
MM118-12
Short Circuit Reverse Current (RBSOA) @ Tj= 125
°C, VCE= 0.8 x VCES
Imax
64 A
66 A
Junction and Storage Temperature Range (
°C)
Tj, Tstg
-55 to +150
-55 to +150
Continuous Source Current (parallel Diode)
IS
60 A
50 A
Pulse Source Current (parallel Diode)
ISM
100 A
100 A
Maximum Ratings @ 25
°C (unless otherwise specified) - continued
Datasheet# MSC0321A



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