ACE8205A datasheet(3/8 Pages) ACE

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ACE8205A

Dual N-Channel Enhancement Mode Field Effect Transistor

VER 1.1

Electrical Characteristics (TA=25 OC unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=19.5V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±10V,VDS=0V

±100

On Characteristics

(Note 2)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.5

0.7

1.2

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=4.5A

Ω

VGS=2.5V, ID=3.5A

Ω

Forward Transconductance

gFS

VDS=5V,ID=4.5A

Dynamic Characteristics

(Note3)

Input Capacitance

Clss

VDS=8V,VGS=0V,

F=1.0MHz

600

Output Capacitance

Coss

330

Reverse Transfer Capacitance

Crss

140

Switching Characteristics

(Note 3)

Turn-on Delay Time

td(on)

VDD=10V,ID=1.0A

VGS=4.5V,RGEN=6Ω

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Total Gate Charge

VDS=10V,ID=6A

VGS=4.5V

Gate-Source Charge

Qgs

2.3

Gate-Drain Charge

Qgd

1.5

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 2)

VSD

VGS=0V,IS=1.7A

0.75

1.2

Diode Forward Current

(Note 1)

1.7

Notes:

Surface Mounted on FR4 Board, t ≤ 10 sec.

2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

3. Guaranteed by design, not subject to production.

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