2

SP5054

ELECTRICAL CHARACTERISTICS

These Characteristics are guaranteed by either production test or design. They apply within the specified ambient temperature

and supply voltage ranges unless otherwise stated.

Supply current

Prescaler input voltage

Prescaler input voltage

Prescaler input impedance

Input capacitance

High level input voltage

Low level input voltage

High level input current

Low level input current

Low level input current

High level input current

Low level input current

Clock inout hysteresis

Clock rate

Charge pump output current

Charge pump output leakage current

Drift due to leakage

Charge pump drive output current

Charge pump amplifier gain

Oscillator temperature stability

Oscillator stability with supply voltage

Recommended crystal series resistance

Crystal oscillator drive level

Crystal oscillator source impedance

Ports and Lock Output

Sink current

Port leakage current

Varactor drive amplifier disable

Charge pump disable

Typ.

Value

Conditions

Characteristic

Pin

14

15,16

15,16

4,5,10

4,5,10

4,5,10

5

4,10

3

3

5

5

4

4

10

10

10

1

1

18

2

2

6-9,11

6-9

10

4

50

100

3

0

300

600

300

600

300

1

10

10

350

350

65

50

2

0·4

150

6400

40

400

80

400

400

0·7

1

5

250

700

700

0·5

5

5

2

2

200

10

Units

Min.

Max.

mA

mVrms

mVrms

Ω

pF

V

V

µA

µA

µA

µA

µA

V

MHz

ns

ns

ns

ns

ns

µA

nA

mV/s

mA

ppm/°C

ppm/V

Ω

mV p-p

Ω

mA

µA

µA

µA

500MHz to 2·6GHz sinewave

120MHz and 500MHz, see Fig. 6

See Fig. 4

See Fig. 4

See Fig. 4

See Fig. 4

See Fig. 4

V pin 1 = 2·0V

V pin 1 = 2·0V

At collector of external transistor

V pin 18 = 0·7V

I pin 18 = 100µA

Parallel resonant crystal (note 1)

Nominal spread =

15%

NOTE 1. The maximum resistance quoted refers to all conditions, including start-up.