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DNX-PJS Arkusz danych(PDF) 5 Page - DOMINANT Semiconductors

Numer części DNX-PJS
Szczegółowy opis  High brightness surface mount LED
PDF  13 Pages
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Producent  DOMINANT [DOMINANT Semiconductors]
Strona internetowa  http://www.dominant-semi.com
Logo DOMINANT - DOMINANT Semiconductors

DNX-PJS Arkusz danych(HTML) 5 Page - DOMINANT Semiconductors

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Relative Intensity Vs Forward Current
Forward Current; mA
0
2
4
6
8
10
0
1
2
3
4
5
6
Forward Current Vs Forward Voltage
Forward Voltage; V
1.2
1.4
1.6
1.8
2
2.2
2.4
0
5
10
15
20
25
30
Forward Current Vs Ambient Temperature
Ambient Temperature
0
20
40
60
80
100
0
5
10
15
20
25
Relative Intensity Vs Wavelength
Wavelength; nm
500
550
600
650
700
750
800
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
5
AllnGaP : DNx-PJS
0.2
70°
90°
80°
0
60°
50°
40°
30°
20°
0.6
0.4
1.0
0.8
10°
0°
Radiation Pattern
Yellow
Orange
SuperRed
Amber
DOMINANT
Opto Technologies
Innovating Illumination
TM
Relative Luminous Intensity Vs Forward Current
Forward Current, mA
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
Forward Current Vs Forward Voltage
Forward Voltage, V
1.2
1.4
1.6
1.8
2
2.2
2.4
0
5
10
15
20
25
30
35
Maximum Current Vs Temperature
Ambient Temperature
0
20
40
60
80
100
0
10
20
30
40
50
Relative Intensity Vs Wavelength
Wavelength, nm
500
600
700
800
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Relative Intensity Vs Forward Current
Forward Current, mA
0
10
20
30
40
50
60
70
80
0
0.2
0.4
0.6
0.8
1
1.2
Forward Current vs Forward Voltage
Forward Voltage; V
1.7
1.8
1.9
2
2.1
2.2
2.3
0
10
20
30
40
50
60
70
Maximum Current Vs Ambient Temperature
Ambient Temperature
0 10 20 30 40 50 60 70 80 90 100
0
10
20
30
40
50
60
70
80
Relative Intensity Vs Wavelength
Wavelength; nm
500
550
600
650
700
750
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Yellow
Amber
Red
DOMINANT Semiconductors
30/11/10
Mini DomiLED AlInGaP DNx-PJS - Catalogue-pv2
Page 6 of 9
PRELIMINARY
UNDER DEVELOPMENT
Engineering reference data are not verified. The specifications are subject to
change without notice.
Relative intensity vs. forward current.
Forward current vs. forward voltage.
Radiation pattern.
Maximum current vs. temperature.
Relative Intensity vs. Wavelength
TBD
0.2
70°
90°
80°
0
60°
50°
40°
30°
20°
0.6
0.4
1.0
0.8
10°
0°
Intensity vs Current
0.00
0.50
1.00
1.50
2.00
2.50
3.00
0
20
40
60
80
100
If(mA)
DOMINANT Semiconductors
30/11/10
Mini DomiLED AlInGaP DNx-PJS - Catalogue-pv2
Page 6 of 9
PRELIMINARY
UNDER DEVELOPMENT
Engineering reference data are not verified. The specifications are subject to
change without notice.
Relative intensity vs. forward current.
Forward current vs. forward voltage.
Radiation pattern.
Maximum current vs. temperature.
Relative Intensity vs. Wavelength
TBD
0.2
70°
90°
80°
0
60°
50°
40°
30°
20°
0.6
0.4
1.0
0.8
10°
0°
Intensity vs Current
0.00
0.50
1.00
1.50
2.00
2.50
3.00
0
20
40
60
80
100
If(mA)
06/08/2015V7.0
Allowable Forward Current Vs Duty Ratio
( Ta=25 Deg C, tp≤10uS )
Duty Ratio, %
DNx-PJS
10
100
1000
0.1
1
10
100
Duty Ratio, %
Allowable Forward Current Vs Duty Ratio
( Ta=25 Deg C, tp 10uS )
Forward Current; mA
Forward Current; mA



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