SSESD11B datasheet(2/6 Pages) ONSEMI

2 / 6 page

Bi−Directional TVS

IPP

VRWM

VC VBR

VRWM

VBR

SSESD11B

www.onsemi.com

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Device

Marking

VRWM

(V)

IR (mA)

@ VRWM

VBR (V) @ IT

(Note 2)

C (pF)

VC (V) @

1 A

Max

Min

Typ

Max

(Note 3)

Per IEC61000−4−2

(Note 4)

SSESD11B5.0ST5G

11B5

5.0

1.0

5.8

1.0

13.5

Figures 1 and 2

See Below

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

3. Surge current waveforms per Figure 5.

4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

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