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DMHC3025LSDQ-13 Arkusz danych(PDF) 5 Page - Diodes Incorporated

Numer części DMHC3025LSDQ-13
Szczegółowy opis  30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
PDF  9 Pages
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Producent  DIODES [Diodes Incorporated]
Strona internetowa  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMHC3025LSDQ-13 Arkusz danych(HTML) 5 Page - Diodes Incorporated

  DMHC3025LSDQ-13 Datasheet HTML 1Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 2Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 3Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 4Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 5Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 6Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 7Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 8Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 9Page - Diodes Incorporated  
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DMHC3025LSDQ
Document number: DS37220 Rev. 1 - 2
5 of 9
www.diodes.com
May 2014
© Diodes Incorporated
DMHC3025LSDQ
0.01
0.02
0.03
0.04
0.05
0.06
0
-50 -25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
V
= 4.5V
I= 5A
GS
D
V=
V
I = 10A
GS
D
10
0.5
1.5
2.5
0
1.0
2.0
3.0
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
I= 1mA
D
I = 250µA
D
0
0.3
0.6
0.9
1.2
1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
10
15
20
0
5
T= 25°C
A
T = -55°C
A
T= 85°C
A
T= 125°C
A
T = 150°C
A
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
1,000
100
10
Ciss
Coss
Crss
f = 1MHz
0
2
4
6
8
10
12
Q(nC)
g, TOTAL GATE CHARGE
Figure 11 Gate Charge
0
2
4
6
8
10
V
= 15V
I=
A
DS
D
7.8



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