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AP3591 Arkusz danych(PDF) 6 Page - Diodes Incorporated |
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AP3591 Arkusz danych(HTML) 6 Page - Diodes Incorporated |
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6 / 18 page ![]() AP3591 Document number: DS36906 Rev. 1 - 2 6 of 18 www.diodes.com March 2014 © Diodes Incorporated AP3591 A Product Line of Diodes Incorporated Electrical Characteristics (VIN = 12V, VDD = VDDP = 5V, VOUT = 1.05V, TA = +25oC, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit SUPPLY INPUT VIN Input Voltage – 4.5 – 26 V IQ-CCM Quiescent Current VDD+VDDP current, CCM, EN floating, VFB = 0.8V – 500 800 µA IQ-DEM VDD+VDDP current, DEM, VEN = 5V, VFB = 0.8V – 500 800 µA ISHDN Shutdown Current VDD+VDDP current, DEM, VEN = 0V – 1 10 µA ON-TIME TIMER, OSCILLATOR FREQUENCY AND SOFT START tON On Time VPHASE = 12V, VOUT = 2.5V, RON = 200kΩ 510 630 750 ns VPHASE = 12V, VOUT = 1.05V, RON = 200kΩ 190 260 330 tOFF-MIN Min Off Time – 250 400 580 ns tSS Internal Soft Start Time – 0.82 1.2 1.5 ms PWM CONTROLLER GATE DRIVERS RU_PH Upper Gate Pull-up Resistance VBOOT-VPHASE = 5V, 50mA source current – 3.3 7 Ω RU_GATE Upper Gate Sink Resistance VBOOT-VPHASE = 5V, 50mA sink current – 1 3 Ω RL_PH Lower Gate Pull-up Resistance – – 1.8 4 Ω RL_GATE Lower Gate Sink Resistance VBOOT-VPHASE = 5V, 50mA source current – 0.5 2 Ω – PHASE Falling to LGATE Rising Delay VPHASE < 1.2V to VLGATE > 1.2V – 30 – ns – LGATE Falling to UGATE Rising Delay VLGATE < 1.2V to (VUGATE-VPHASE) > 1.2V – 30 – ns VBOOT Boot Diode Forward Voltage VDDP-VBOOT, IBOOT = 10mA 0.5 0.83 1 V IBSLK VBS Leakage Current VBOOT = 34V, VPHASE = 28V – 0.1 1 µA POWER GOOD – PGOOD Threshold PGOOD from low to high 92.5 95 97.5 % – PGOOD from high to low 102 105 107 % – PGOOD Lower Threshold Hysteresis – – ±5 – % VPG_L PGOOD Low Voltage – – – 0.4 V IPG_LEAK PGOOD Output Leakage Current VPGOOD = 5V – – 1 µA tDELAY PGOOD Delay Time Delay for PGOOD pin 16 22 36 µs |
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