BSP129 datasheet(3/9 Pages) INFINEON

Numer części	BSP129

Szczegółowy opis	SIPMOS Small-Signal-Transistor

PDF	9 Pages

Scroll/Zoom	100%

Producent	INFINEON [Infineon Technologies AG]

Strona internetowa	http://www.infineon.com

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BSP129

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

108

Output capacitance

C oss

-12

Reverse transfer capacitance

Crss

-6

Turn-on delay time

t d(on)

4.4

6.6

Rise time

t r

4.1

6.2

Turn-off delay time

t d(off)

-22

Fall time

t f

-35

Gate Charge Characteristics

Gate to source charge

Q gs

0.24

0.36

Gate to drain charge

Q gd

1.7

2.6

Gate charge total

Q g

3.8

5.7

Gate plateau voltage

V plateau

0.37

Reverse Diode

Diode continous forward current

I S

0.35

Diode pulse current

I S,pulse

1.4

Diode forward voltage

V SD

V GS=-3 V, I F=0.35 A,

T j=25 °C

0.79

1.2

Reverse recovery time

t rr

-53

Reverse recovery charge

Q rr

-65

V R=120 V, I F=0.2 A,

di F/dt =100 A/µs

T A=25 °C

Values

V GS=-3 V, V DS=25 V,

f =1 MHz

V DD=120 V,

V GS=-2...5 V,

I D=0.2 A, R G=7.6 Ω

V DD=192 V, I D=0.2 A,

V GS=-3 to 5 V

Rev. 1.0

page 3

2003-03-28

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