BSP149 datasheet(3/9 Pages) INFINEON

Numer części	BSP149

Szczegółowy opis	SIPMOS Small-Signal-Transistor

PDF	9 Pages

Scroll/Zoom	100%

Producent	INFINEON [Infineon Technologies AG]

Strona internetowa	http://www.infineon.com

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BSP149

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

326

430

Output capacitance

C oss

-41

Reverse transfer capacitance

Crss

-17

Turn-on delay time

t d(on)

5.1

7.7

Rise time

t r

3.4

5.1

Turn-off delay time

t d(off)

-45

Fall time

t f

-21

Gate Charge Characteristics

Gate to source charge

Q gs

0.74

1.0

Gate to drain charge

Q gd

5.6

8.4

Gate charge total

Q g

-11

Gate plateau voltage

V plateau

0.16

Reverse Diode

Diode continous forward current

I S

0.66

Diode pulse current

I S,pulse

2.6

Diode forward voltage

V SD

V GS=-3 V, I F=0.66 A,

T j=25 °C

0.9

1.2

Reverse recovery time

t rr

-42

Reverse recovery charge

Q rr

-60

V R=100 V, I F=0.5 A,

di F/dt =100 A/µs

T A=25 °C

Values

V GS=-3 V, V DS=25 V,

f =1 MHz

V DD=100 V,

V GS=-2…7 V,

I D=0.50 A, R G=6 Ω

V DD=160 V,

I D=0.05 A,

V GS=-3 to 5 V

Rev. 1.0

page 3

2003-04-03

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