STP18N60DM2 datasheet(1/13 Pages) STMICROELECTRONICS

Numer części	STP18N60DM2

Szczegółowy opis	Extremely high dv/dt ruggedness

PDF	13 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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January 2016

DocID027674 Rev 3

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This is information on a product in full production.

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STP18N60DM2

N-

channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2

Power MOSFET in a TO-220 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

STP18N60DM2

600 V

0.295 Ω

12 A



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STP18N60DM2

18N60DM2

TO-220

Tube

AM15572v1_tab

D(2, TAB)

G(1)

S(3)

Podobny numer części - STP18N60DM2

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