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BTS142D Arkusz danych(PDF) 1 Page - Infineon Technologies AG |
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BTS142D Arkusz danych(HTML) 1 Page - Infineon Technologies AG |
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1 / 10 page ![]() 2004-03-05 Page 1 HITFETÒ II.Generation BTS 142 D Smart Lowside Power Switch Product Summary Drain source voltage VDS 42 V On-state resistance RDS(on) 28 m W Nominal load current ID(Nom) 4.6 A Clamping energy EAS 3.5 J Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown with auto restart · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible P-TO252-3-11 Application · All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for 12 V DC applications · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded protection functions. Gate-Driving Unit ESD Overload Protection Over- temperature Protection Short circuit Protection Overvoltage- Protection Current Limitation M Vbb In Source Drain HITFET â Pin 1 Pin 2 and 4 (TAB) Pin 3 Complete product spectrum and additional information http://www.infineon.com/hitfet |
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