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STPS40L15C Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STPS40L15C
Szczegółowy opis  Low drop OR-ing power Schottky diode
PDF  8 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS40L15C Arkusz danych(HTML) 3 Page - STMicroelectronics

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STPS40L15C
Characteristics
Doc ID 4926 Rev 6
3/8
Figure 1.
Average forward power dissipation
versus average forward current
(per diode)
Figure 2.
Average forward current versus
ambient temperature
(
δ = 1, per diode)
0
2
4
6
8
1012
1416182022
0
1
2
3
4
5
6
7
8
PF(av)(W)
IF(av) (A)
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
T
δ=tp/T
tp
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
20
22
Tamb(°C)
IF(av)(A)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
T
δ=tp/T
tp
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
P(tp)
P
(1µs)
ARM
ARM
t (µs)
p
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
P(T )
P
(25 °C)
ARM
j
ARM
T (°C)
j
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values per diode)
Figure 6.
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
1E-3
1E-2
1E-1
1E+0
0
50
100
150
200
250
t(s)
IM(A)
Tc=50°C
Tc=75°C
Tc=110°C
IM
t
δ=0.5
1.0E-4
1.0E-3
1.0E-2
1.0E-1
1.0E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp (s)
Zth(j-c)/Rth(j-c)
T
δ=tp/T
tp
Single pulse
δ = 0.5
δ = 0.2
δ = 0.1



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