STTH1R04AY datasheet(3/10 Pages) STMICROELECTRONICS

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STTH1R04-Y

Characteristics

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25 °C

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25 °C

IRM

Reverse recovery current

IF = 1 A, dIF/dt = -200 A/µs,

VR = 320 V, Tj = 125 °C

2.5

3.5

tfr

Forward recovery time

IF = 1 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25 °C

VFP

Forward recovery voltage

IF = 1 A, dIF/dt = 100 A/µs, Tj = 25 °C

2.9

Figure 1. Conduction losses versus

average forward current

Figure 2. Forward voltage drop versus forward

current

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.0

0.2

0.4

0.6

0.8

1.0

1.2

P(W )

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

IF(AV)(A)

IFM(A)

0.1

1.0

10.0

100.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

4.4

J=150°C

(Maximum values)

J=150°C

(Typical values)

J=25°C

(Maximum values)

VFM(V)

Figure 3. Relative variation of thermal

impedance junction to ambient

versus pulse duration, SMA

Figure 4. Relative variation of thermal

impedance junction to ambient

versus pulse duration, SMB

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

SMA

Scu= 1cm²

Z/R

th(j-a) th(j-a)

tP(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

tP(s)

Z/R

th(j-a) th(j-a)

SMB

= 1 cm

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