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STPSC8TH13TI Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STPSC8TH13TI Arkusz danych(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() DocID024698 Rev 3 3/8 STPSC8TH13TI Characteristics Table 5. Dynamic electrical characteristics (per diode) Symbol Parameter Test conditions Typ. Unit Qcj (1) Total capacitive charge VR = 400 V 23.5 nC Cj Total capacitance VR = 0 V, Tc = 25 °C, F = 1 MHz 414 pF VR = 400 V, Tc = 25 °C, F = 1 MHz 38 1. Most accurate value for the capacitive charge: Figure 1. Forward voltage drop versus forward current (typical values, low level, per diode) Figure 2. Forward voltage drop versus forward current (typical values, high level, per diode) Figure 3. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 4. Peak forward current versus case temperature (per diode) |
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