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STW56N60DM2 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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STW56N60DM2 Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() June 2015 DocID026982 Rev 3 1/12 This is information on a product in full production. www.st.com STW56N60DM2 N- channel 600 V, 0.052 Ω typ., 50 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STW56N60DM2 600 V 0.060 Ω 50 A 360 W • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STW56N60DM2 56N60DM2 TO-247 Tube TO-247 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) |
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