STW56N65DM2 datasheet(3/12 Pages) STMICROELECTRONICS

Numer części	STW56N65DM2

Szczegółowy opis	N-channel 650 V, 0.058 Ω typ., 48 A MDmesh™ DM2 Power MOSFET in a TO-247 package

PDF	12 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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3 / 12 page

STW56N65DM2

Electrical ratings

DocID027142 Rev 2

3/12

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

IDM(1)

Drain current (pulsed)

192

PTOT

Total dissipation at Tcase = 25 °C

360

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

Notes:

(1) Pulse width is limited by safe operating area.

(2) ISD ≤ 48 A, di/dt= 900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V

(3) VDS ≤ 520 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.35

°C/W

Rthj-amb

Thermal resistance junction-ambient

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

EAS(1)

Single pulse avalanche energy

1300

Notes:

(1) starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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