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SPD09P06PL Arkusz danych(PDF) 1 Page - Infineon Technologies AG

Numer części SPD09P06PL
Szczegółowy opis  SIPMOS Power-Transistor
PDF  8 Pages
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Producent  INFINEON [Infineon Technologies AG]
Strona internetowa  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPD09P06PL Arkusz danych(HTML) 1 Page - Infineon Technologies AG

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2001-07-02
Page 1
SPD09P06PL
SPU09P06PL
Final data
SIPMOS
====Power-Transistor
Product Summary
VDS
-60
V
RDS(on)
0.25

ID
-9.7
A
Feature
 P-Channel
 Enhancement mode
 Logic Level
175°C operating temperature
 Avalanche rated
 dv/dt rated
P-TO251-3-1
P-TO252
Gate
pin1
Drain
pin 2
Source
pin 3
Type
Package
Ordering Code
SPD09P06PL
P-TO252
Q67042-S4007
SPU09P06PL
P-TO251-3-1
Q67042-S4020
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
TC=25°C
TC=100°C
ID
-9.7
-6.8
A
Pulsed drain current
TC=25°C
ID puls
-38.8
Avalanche energy, single pulse
ID=-9.7 A , VDD=-25V, RGS=25
EAS
70
mJ
Avalanche energy, periodic limited by Tjmax
EAR
4.2
Reverse diode dv/dt
IS=-9.7A, VDS=-48, di/dt=200A/µs, Tjmax=175°C
dv/dt
6
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
TC=25°C
Ptot
42
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56


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