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AP70SL950AI Arkusz danych(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP70SL950AI Arkusz danych(HTML) 4 Page - Advanced Power Electronics Corp. |
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4 / 5 page ![]() AP70SL950AI 0.37Ω Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Total Power Dissipation Fig 12. Normalized BVDSS v.s. Junction Temperature 4 0.1 1 10 100 1000 10000 0 100 200 300 400 500 600 700 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 2 4 6 8 10 12 0 4 8 12 16 20 Q G , Total Gate Charge (nC) I D =2.2A V DS =480V 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.001 0.01 0.1 1 10 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T C =25 o C Single Pulse 10us 100us 1ms 10ms 100ms DC 0 10 20 30 40 0 50 100 150 T C , Case Temperature ( o C ) Operation in this area limited by RDS(ON) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =1mA . |
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