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DF2B7SL Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części DF2B7SL
Szczegółowy opis  ESD Protection Diodes Silicon Epitaxial Planar
PDF  8 Pages
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

DF2B7SL Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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DF2B7SL
2
4.
4.
4.
4. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25
))))
VRWM: Working peak reverse
voltage
VBR: Reverse breakdown voltage
IBR: Reverse breakdown current
IR: Reverse current
VC: Clamp voltage
IPP: Peak pulse current
RDYN: Dynamic resistance
Fig.
Fig.
Fig.
Fig. 4.1
4.1
4.1
4.1 Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Characteristics
Working peak reverse voltage
Reverse breakdown voltage
Reverse current
Clamp voltage
Dynamic resistance
Total capacitance
Symbol
VRWM
VBR
IR
VC
RDYN
Ct
Note
(Note 1), (Note 3)
(Note 2)
(Note 3)
Test Condition
IBR = 1 mA
VRWM = 5.3 V
IPP = 1 A
IPP = 3 A
VR = 0 V, f = 1 MHz
Min
5.8
Typ.
6.8
2
8
11
0.3
6
Max
5.3
7.8
500
16
8
Unit
V
V
nA
V
V
pF
Note 1: Based on IEC61000-4-5 8/20 µs pulse.
Note 2: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,
extraction of dynamic resistance using a least-squares fit of TLP characteristics at IPP between 8 A to 16 A.
Note 3: Guaranteed by design.
2015-04-03
Rev.5.0



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