2

GaAs SPDT Switch

DC - 3.0 GHz

Rev. V6

MASWSS0115

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Parameter

Test Conditions

Units

Min.

Typ.

Max.

DC - 1 GHz

1 - 3 GHz

dB

dB

—

—

0.25

0.30

0.40

0.55

Isolation

DC - 1 GHz

1 - 3 GHz

dB

dB

20

—

24

22

—

—

Return Loss

0.05 - 3 GHz

dB

—

20

—

IP2

Two Tone, +5 dBm/tone, 5 MHz Spacing, >50 MHz

dBm

—

90

—

IP3

Two Tone, +5 dBm/tone, 5 MHz Spacing, >50 MHz

dBm

—

46

—

P1dB

dBm

dBm

—

—

21

25

—

—

Trise, Tfall

10% to 90% RF, 90% to 10% RF

ns

—

35

—

Ton, Toff

50% control to 90% RF, 50% control to 10% RF

ns

—

40

—

Transients

In band

mV

—

10

—

Control Current

µA

—

5

20

6

6. External DC blocking capacitors are required on all RF ports.

7. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 1 GHz, 39 pF for 0.5 - 3 GHz.

Qualification

Qualified to M/A-COM specification REL-201, Process Flow

–2.

Handling Procedures

The following precautions should be observed to avoid dam-

age:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive to electro-

static discharge (ESD) and can be damaged by static elec-

tricity. Proper ESD control techniques should be used when

handling these devices.

Control V1

Control V2

RFC-RF1

RFC-RF2

0

1

On

Off

1

0

Off

On

8. Differential voltage, V(state 1) - V(state 0), must be +2.3 V

minimum.

9. 0 = 0 V ± 0.2 V, 1 = +2.3 V to 5.0 V

Die Bond Pad Layout