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2SA1080 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części 2SA1080
Szczegółowy opis  Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.)
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1080 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistor
2SA1080
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -1mA; RBE= ∞
-40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -0.1μ A; IE= 0
-40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -0.1μ A; IC= 0
-7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -10mA; IB= -1mA
-0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -10mA; IB= -1mA
-1.0
V
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
-100
nA
ICEO
Collector Cutoff Current
VCE= -40V; IB= 0
-500
nA
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
-100
nA
hFE
DC Current Gain
IC= -10mA; VCE= -5V
100
350
COB
Outut Capacitance
IE= 0; VCB= -20V; f= 1.0MHz
65
pF
fT
Current-Gain
—Bandwidth Product
IC= -10mA;VCE= -10V; f=10MHz
30
MHz



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