2SA652 datasheet(2/2 Pages) ISC

Numer części	2SA652

Szczegółowy opis	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.)

PDF	2 Pages

Scroll/Zoom	100%

Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

Logo

2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor

2SA652

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -50mA ; IB= 0

-100

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

-150

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -0.5A; IB= -50mA

-1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= -0.5A; IB= -50mA

-2.0

ICBO

Collector Cutoff Current

VCB= -150V; IE= 0

-10

μ A

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-10

μ A

hFE

DC Current Gain

IC= -0.2A; VCE= -5V

200

COB

Collector Output Capacitance

IE=0; VCB= -5V; f= 1MHz

100

Current-Gain

—Bandwidth Product

IC= -0.1A; VCE= -10V

MHz

2SA652 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

2SA652 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

Arkusz danych Pobierz

Link URL