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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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2SC5890 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC5890 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 11 page  INCHANGE Semiconductor isc RF Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN RF Transistor 2SC5890 DESCRIPTION · High Gain Bandwidth Product fT = 7.8 GHz TYP. · High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz APPLICATIONS · Designed for use in UHF ~ VHF wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous 75 mA PC Collector Power Dissipation @TC=25℃ 0.7 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Podobny numer części - 2SC5890 |
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Podobny opis - 2SC5890 |
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