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2SA2140 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA2140 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA2140 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for power amplification and for TV VM circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICP Collector Current-Peak -3 A PC Collector Power Dissipation @Ta=25℃ 2 W Collector Power Dissipation @TC=25℃ 20 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Podobny numer części - 2SA2140 |
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Podobny opis - 2SA2140 |
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