2N6763 datasheet(1/2 Pages) ISC

Numer części	2N6763

Szczegółowy opis	VGS Rated at 짹20V

PDF	2 Pages

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Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

2N6763

DESCRIPTION

·VGS Rated at ±20V

·Silicon Gate for fast switching speeds

·I

DSS 、RDS(ON) ,specified at elevated temperature

·Low drive reqirements

APPLICATIONS

designed for high power ,high speed application ,such as

switching applies,UPS,AC and DC motor controls ,

relay and high energy pulse circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

60

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=37℃

31

A

Ptot

Total Dissipation@TC=25℃

150

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.83

℃/W

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