2SD1616A

NPN

SILICON

TRANSISTOR

DESCRIPTION

2SD1616A is NPN silicon planar

transistor designed for use in driver and

output stages of AF amplifier, general

purpose application.

ABSOLUTE MAXIMUM RATINGS

Collector-Emitter Voltage

60V

Collector-Base Voltage

120V

Emitter-Base Voltage

6V

Collector Current Continuous

1A

Total Power Dissipation @ Ta=25

0.65W

Operating & Storage Junction Temperature

-55 to +150

ELECTRICAL CHARACTERISTICS (Ta=25

PARAMETER

SYMBOL MIN

MAX UNIT

CONDITIONS

Collector Cutoff Current

100

nA

Emitter Cutoff Current

100

nA

D.C. Current Gain

170

350

D.C. Current Gain

45

Base-Emitter Voltage

600

700

mV

Collector-Emitter Saturation Voltage

0.5

V

Base-Emitter Saturation Voltage

1.2

V

Output Capacitance

19

TYP.

pF

Gain Bandwidth Product

100

Turn-On Time

0.07

TYP.

µs

Vcc=10V

Storage Time

0.95

TYP.

µs

Fall Time

0.07

TYP.

µs

* Pulse test PW ≦ 350

µs, duty cycle ≦ 2%.

MICRO

12.7

(0.5)

min.

4.6

(0.18)

10

2.54

(0.1)

0.51

(0.02)

Bottom view

0.45

(0.018)

Unit: mm(inch)

TO-92B

0.4

(0.016)

4.68

(0.18)

3.58

(0.14)

E

BC

G/F, 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong.

Kwun Tong P.O. BOX 69477, Hong Kong. TEL: (852) 23430181 FAX: (852) 23410321

HOMEPAGE: http://www.microelectr.com.hk E-MAIL ADDRESS: common@microelectr.com.hk

MICRO ELECTRONICS LTD.