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2SD1896 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części 2SD1896
Szczegółowy opis  High Collector Power Dissipation
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1896 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
2SD1896
DESCRIPTION
·
Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 3A
·
High Collector Power Dissipation
·
Good Linearity of hFE
APPLICATIONS
·
Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Pulse
10
A
PC
Collector Power Dissipation
@ Ta=25℃
2
W
Collector Power Dissipation
@ TC=25℃
40
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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