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2SK385 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK385 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK385 ·ELECTRICAL CHARACTERISTICS (T C=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 400 V VGS(TH) Gate Threshold Voltage VDS= 10V; ID= 1mA 1.5 3.5 V RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 5A 0.45 0.60 Ω IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 1 mA tr Rise time VGS=10V;ID=5A;RL=50Ω 50 100 ns ton Turn-on time 80 150 ns tf Fall time 80 150 ns toff Turn-off time 350 700 ns PDF pdfFactory Pro www.fineprint.cn |
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