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DB101S Arkusz danych(PDF) 2 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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DB101S Arkusz danych(HTML) 2 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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2 / 4 page ![]() Technical Data Green Products Data Sheet N1459, Rev. - • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • DB101S THRU DB107S Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol DB101S DB102S DB103S DB104S DB105S DB106S DB107S Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum Average Forward Output Current @ TA = 40°C IF(AV) 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A Maximum Forward Voltage Drop per Bridge Element at 1.0A DC VF 1.1 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IR 5 500 μA Operating Junction and Storage Temperature Range TJ ,TSTG -55+150 °C NOTE: Suffix “-s” Surface Mount for Dip Bridge. |
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